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2024, Vol: 11, Issue: 2
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Research Article 


Performance Comparison of Nanoscale Double Gate Ge and GaN FinFETs

Nura Muhammad Shehu, Mutari Hajara Ali, Garba Babaji, Bahijja Yahaya Galadima.


Abstract
This paper presents a comparative study of the impact of Short Channel Effects (SCEs); threshold voltage variation, subthreshold swing, and drain-induced barrier lowering on both Ge and GaN FinFET devices. The analysis was carried out in the PADRE Simulator environment. The study also analyzes the transconductance and drive currents of these materials. The results reveal that the use of Ge as a channel material for FinFET devices can result in higher drive currents and transconductance compared to GaN-based devices. However, Ge-FinFETs are more prone to short-channel effects, which can impact their performance. On the other hand, GaN-based FinFETs show better immunity to short-channel effects, but their transconductance and drive currents are comparatively lower. This finding contributes valuable insights that can significantly advance the development and optimization of FinFET devices employing Germanium and Gallium Nitride as channel materials.

Key words: Channel material, Drive currents, DIBL, SCEs, Transconductance


 
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How to Cite this Article
Pubmed Style

Shehu NM, Ali MH, Babaji G, Galadima BY. Performance Comparison of Nanoscale Double Gate Ge and GaN FinFETs. Equijost. 2023; 10(2): 5-9.

Web Style

Shehu NM, Ali MH, Babaji G, Galadima BY. Performance Comparison of Nanoscale Double Gate Ge and GaN FinFETs. https://www.equijost.com/?mno=162609 [Access: June 27, 2026].

AMA (American Medical Association) Style

Shehu NM, Ali MH, Babaji G, Galadima BY. Performance Comparison of Nanoscale Double Gate Ge and GaN FinFETs. Equijost. 2023; 10(2): 5-9.


Vancouver/ICMJE Style

Shehu NM, Ali MH, Babaji G, Galadima BY. Performance Comparison of Nanoscale Double Gate Ge and GaN FinFETs. Equijost. (2023), [cited June 27, 2026]; 10(2): 5-9.


Harvard Style

Shehu, N. M., Ali, . M. H., Babaji, . G. & Galadima, . B. Y. (2023) Performance Comparison of Nanoscale Double Gate Ge and GaN FinFETs. Equijost, 10 (2), 5-9.


Turabian Style

Shehu, Nura Muhammad, Mutari Hajara Ali, Garba Babaji, and Bahijja Yahaya Galadima. 2023. Performance Comparison of Nanoscale Double Gate Ge and GaN FinFETs. Equity Journal of Science and Technology, 10 (2), 5-9.


Chicago Style

Shehu, Nura Muhammad, Mutari Hajara Ali, Garba Babaji, and Bahijja Yahaya Galadima. "Performance Comparison of Nanoscale Double Gate Ge and GaN FinFETs." Equity Journal of Science and Technology 10 (2023), 5-9.


MLA (The Modern Language Association) Style

Shehu, Nura Muhammad, Mutari Hajara Ali, Garba Babaji, and Bahijja Yahaya Galadima. "Performance Comparison of Nanoscale Double Gate Ge and GaN FinFETs." Equity Journal of Science and Technology 10.2 (2023), 5-9. Print.


APA (American Psychological Association) Style

Shehu, N. M., Ali, . M. H., Babaji, . G. & Galadima, . B. Y. (2023) Performance Comparison of Nanoscale Double Gate Ge and GaN FinFETs. Equity Journal of Science and Technology, 10 (2), 5-9.




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